Melting of porous silicon under the action of a nanosecond pulsed high-power ion beam |
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| Authors: | V. S. Kovivchak N. A. Davletkil’deev |
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| Affiliation: | 1. Institute of Semiconductor Physics (Omsk Division), Siberian Branch, Russian Academy of Sciences, Omsk, 644018, Russia
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| Abstract: | We have studied the melting of porous silicon (por-Si) layers under the action of a nanosecond pulsed high-power proton-carbon ion beam. Dimensions of ellipsoidal silicon particles formed as a result of this processing have been determined. The threshold energy density necessary for the melting of por-Si with a porosity of ～50% is experimentally evaluated. |
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