Influence of metal-ferroelectric contacts on the space charge formation in ferroelectric thin film capacitors

We have studied the response speed characteristics of capacitor structures based on thin Ba_0.3Sr_0.7TiO₃ (BSTO) films with metal-ferroelectric contacts of various types formed under different conditions. It is established that threshold voltages exist for the appearance of a residual space charge in some structures. A comparative analysis of the technological features of contact formation and experimental data on the characteristics of samples leads to the conclusion that, by forming Pt-BSTO contacts in an oxygen-containing atmosphere, it is possible to suppress the injection of carriers into the ferroelectric film in the capacitor structure.