Suppressed recombination in quantum dot-sensitized solar cells with blocking layers on FTO substrates |
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Authors: | Lee Wonjoo Yoo Beomjin Kim Kyungkon Lee Doh-Kwon Kim Honggon Ko Min Jae |
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Affiliation: | Korea Institute of Science and Technology, 39-1 Hawolkok-Dong, Sungbuk-Ku, Seoul, 136-791, Republic of Korea. |
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Abstract: | The compact and thin TiO2 blocking layers (c-TiO2) were formed on F-doped SnO2 (FTO) substrate in quantum dots-sensitized solar cells (QSSCs) by chemical deposition. The c-TiO2 layers induced indirect contact between electrolyte and FTO electrode, which reduced leakage in QSSCs. The QSSCs showed power conversion efficiency (Eff) of 3.85% in the presence of c-TiO2 layers which leads to 21% improved compared to that without c-TiO2 layers (Eff = 3.18%). The presence of the c-TiO2 layers in QSSCs also improved the stability under illumination. |
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