The significant effect of film thickness on the properties of chalcopyrite thin absorbing films deposited by RF magnetron sputtering |
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| Affiliation: | 1. University Department of Physics, Ranchi University, Ranchi 834008, India;2. Department of Electrical Engineering, College of Technology and Engineering, Udaipur 313001, India;3. Institute Instrumentation Centre, Indian Institute of Technology, Roorkee 247667, India;1. Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey;2. Department of Bioengineering, Faculty of Engineering and Architecture, Kafkas University, Turkey;3. Department of Chemistry, Faculty of Sciences, University of Atatürk, 25240 Erzurum, Turkey;4. Physics Engineering Department, Faculty of Science, Istanbul Medeniyet University, Istanbul 34100, Turkey;1. Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan;2. Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310037, PR China;1. Department of Chemistry, Istanbul Technical University, 34469 Istanbul, Turkey;2. Department of Physics, Yıldız Technical University, 34210 Istanbul, Turkey;3. Yıldız Technical University, Vocational School, Maslak, Istanbul, Turkey;4. Department of Industrial Engineering, Yalova University, 77000 Yalova, Turkey;1. Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod 603950, Russia;2. Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il׳insky street, Nizhny Novgorod 603950, Russia;3. Nizhny Novgorod Academy of the Ministry of Internal Affairs of Russia, 3 Ankudinovskoe Shosse, Nizhny Novgorod 603950, Russia;1. Department of Physics, Sri Ramakrishna Mission Vidyalaya college of Arts and Science, Coimbatore 641020, Tamil Nadu, India;2. Research & Development Centre, Bharathiar University, Coimbatore 641046, Tamil Nadu, India;3. Department of Physics, Dr. Mahalingam College of Engineering and Technology, Pollachi 642003, Tamil Nadu, India;4. Department of Physics, Adhiyamaan College of Engineering, Hosur 635109, Tamil Nadu, India |
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| Abstract: | In this paper, thickness dependent structural, surface morphological, optical and electrical properties of RF magnetron sputtered CuIn0.8Ga0.2Se2 (CIGS) thin films were studied using X-ray diffraction (XRD), Transmission electron microscopy (TEM), Field emission scanning electron microscopy (FE-SEM), Atomic force microscopy (AFM), UV–vis–NIR spectrophotometer and Keithley electrical measurement unit. The peak intensity along (112) plane as well as crystallite size was found to increase with thickness. However, for higher film thickness >1.16 μm, crystallinity reduced due to higher % of Cu content. TEM analysis confirmed pollycrysallinity as well as chalcopyrite phase of deposited films. The band gap was found to decrease with increase in thickness yielding a minimum value of 1.12 eV for film thickness 1.70 μm. The I–V characteristics showed the ohmic behavior of metal semiconductor contact with higher conductivity for film thickness 1.16 μm. |
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| Keywords: | CIGS Film thickness XRD Band gap |
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