Structural,optical and electrical properties of Cu2FeSnSe4 and Cu(In,Al)Se2 thin films |
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| Affiliation: | 1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;2. Laboratory for Microstructures, Shanghai University, 99 Shangda Rd, Shanghai 200444, China;1. Department of Physics, Arab-American University, Jenin, West Bank, Palestine;2. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;3. Physics Department, Sciences Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia;4. Department of Physics, Middle East Technical University, 06800 Ankara, Turkey;5. Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan;1. Basic Science Department, High Institute of Engineering and Technology, El-Arish, North Sinai, Egypt;2. Department of Physics, Faculty of Science at New Damietta, Damietta University, 34517 New Damietta, Egypt;3. Solid State Electronics Laboratory, Solid State Physics Department, Physics Division, National Research Centre, 33 El-Bohouth St., Dokki, Giza 12622, Egypt;1. Lesya Ukrainka Eastern European National University, 43025 Lutsk, Ukraine;2. Semiconductor Physics Department and Institute of Applied Research, Vilnius University, Saulėtekio al. 9, bldg.3, LT-10222 Vilnius, Lithuania;1. Institute of Nano Electronic Engineering, University Malaysia Perlis, Kangar, Perlis Malaysia;2. Physics Department, Faculty of Science, University of Sidi-Bel-Abbes, 22000 Algeria;3. Laboratoire d׳Etude des Matériaux et Instrumentations optiques, Djilali Liabés University, 22000 Algeria;4. Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 Mascara, Algérie;5. Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;1. State Key Laboratory of Advanced Processing and Recycling of Non-ferrous Metals, Department of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, China;2. Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China |
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| Abstract: | Cu-based semiconductors Cu2FeSnSe4 (CFTSe) and Cu(In, Al)Se2 (CIAS) have been fabricated using radio-frequency magnetron sputtering combined with rapid thermal selenization processing. For CFTSe, the heating rate ranging from 60 to 150 °C/min results in a difference in structure, morphology and optical properties. Thin film exhibits a pure phase structure, smooth surface and a band gap of 1.19 eV as the heating rate elevated to 90 °C/min. Furthermore, the CFTSe thin film selenized at 90 °C/min own the smallest value of cell volume compared with the others samples, which represents a more stable structure. In terms of the other Cu-based material CIAS, three different selenization pressures, i.e., 1, 5 and 10 Torr, have been employed for CIAS preparation. Thin film transforms into single phase with dense morphology along with the pressure of 1 Torr. The diverse band gap of CIAS thin films from 1.34 to 2.18 eV attribute to two reasons: (i) the various Al content will affect the hybridization degree of Al–Se, and finally tunes the band structure, (ii) amounts of CuSe has a certain degree of effect on the band gap of the CIAS. In addition, the electrical properties of CFTSe and CIAS are also researched with the open circuit voltage (Voc) of 94 and 365 mV, respectively, signifying potential applications of CFTSe and CIAS for the thin film solar cells. |
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| Keywords: | Sputtering Selenization Solar cell |
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