Investigation of characteristics of ZnO:Ga nanocrystalline thin films with varying dopant content |
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| Affiliation: | 1. Department of Elementary Science, Faculty of Education, Ataturk University, 25240 Erzurum Turkey;2. Advanced Materials Research Laboratory, Department of Nanoscience and Nanoengineering, Graduate School of Natural and Applied Sciences, Ataturk University, 25240 Erzurum Turkey;1. Department of Physics, University College of Science, Osmania University, Saifabad, Hyderabad 500004, India;2. Department of Physics, Osmania University, Hyderabad 500007, India;3. School of Physics, Eternal University, Baru Sahib 173101, Himachal Pradesh, India;1. Institute of Polymeric Materials, Sahand University of Technology, Tabriz, Iran;2. Faculty of Polymer Engineering, Sahand University of Technology, Tabriz, Iran;1. Physics Department, Faculty of Education, Ain Shams University, Roxy, P.O. 11757, Cairo, Egypt;2. Physics Department, Faculty of Science, Ain Shams University, Abbassia, P.O. 11566, Cairo, Egypt;3. Solid State Physics Department, National Research Centre, 33 El Bohouth St. (former El Tahrir st.), Dokki, P.O.12622, Giza, Egypt;1. Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Tunis-El Manar University, 2092, Tunisia;2. King Khalid University, Faculty of Science, Physics, Department, P.O. Box 9004, Abha 61413, Saudi Arabia;3. Laboratoire de Physique des Rayonnements, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba 23000, Algeria;1. Materials and Renewable Energies Laboratory, Ibn Zohr University, Faculty of Sciences, BP 8106 Dakhla, Agadir, Morocco;2. Optoelectronics and Physical Chemistry of Materiaux Laboratory, Ibn Tofail University, Faculty of Sciences, BP 133 14000 Kenitra, Morocco;3. Materials and Valorizations of Natural Resources Laboratory, Abdelmalek Essaadi University, Tanger, Morocco;4. Hassan II University, Faculty of Science and Technology Mohammedia, Morocco |
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| Abstract: | In this study, undoped and Ga doped ZnO thin films were synthesized by the sol–gel spin coating technique. The effect of Ga contribution on the structural, morphological and optical properties of the ZnO thin films was examined. XRD results showed that all films had a hexagonal wurtzite crystal structure with polycrystalline nature. The intensity of the (002) peak changed with the variable Ga content. The scanning electron microscopy (SEM) results revealed that the surface morphology of the ZnO thin films was affected by Ga content. Moreover, it consisted of nanorods as a result of the increased function of the Ga content. Additionally, the presence of Ga contributions was evaluated by energy dispersive x-ray (EDX) measurements. Although the transparency and the optical band gap of the ZnO thin films increased with Ga contribution, Urbach energy values decreased from 221 meV to 98 meV. In addition, these steepness parameters increased with the increased Ga content from 0% to 6%. The correlation between structural and optical properties was investigated and significant consistency was found. |
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| Keywords: | Thin films ZnO nanoparticles Sol–gel process |
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