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A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film
Affiliation:1. Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China;2. Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences, Guangzhou 510650, China;1. Department of Liberal Arts, Tokyo National College of Technology, 1220-2 Kunugida, Hachioji, Tokyo 193-0997, Japan;2. Department of Electrical Engineering and Electronics, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan;3. National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan;4. Department of Applied Chemistry, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan;5. Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan;6. Koha Co. Ltd., 2-6-8 Kouyama, Nerima, Tokyo 176-0022, Japan;1. Agnitron Technology Incorporated, Eden Prairie, MN 55346, USA;2. CREOL, The College of Optics and Photonics, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816, USA;3. BRIDG, 400 W. Emmett Street, Kissimmee, FL 34741, USA;1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China;2. School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China;3. Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences, Suzhou, 215123, China;4. Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences, Suzhou, 215123, China;5. State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China;1. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, 200433 Shanghai, China;2. Jia-Shan Fudan Institute, Jiaxing, Zhejiang Province 314100, China;3. Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Shanghai Institute Communication and Data Science, Shanghai University, Shanghai 200444, China
Abstract:Beta phase Gallium trioxide (β-Ga2O3) thin film was grown by metal organic chemical vapor deposition technology. Mixture gases of SF6 and Ar were used for dry etching of β-Ga2O3 thin film by inductively coupled plasma (ICP). The effect of SF6/Ar (etching gas) ratio on etch rate and film etching damage was studied. The etching rate and surface roughness were measured using F20-UN thin film analyzer and atomic force microscopy showing that the etching rate in the range between 30 nm/min and 35 nm/min with an improved surface roughness was obtained when the reactive mixed gas of SF6/Ar was used. The analysis of X-ray diffraction and transmission spectra further confirmed the non-destructive crystal quality. This work demonstrates that the properly proportioned mixture gases of SF6/Ar is suitable for the dry etching of β-Ga2O3 thin film by ICP and can serve as a guide for future β-Ga2O3 device processing.
Keywords:ICP etching  Dry etching
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