Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates |
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| Affiliation: | 1. Laboratory of Metallic and Semiconducting Materials, Université de Biskra, B.P. 145, 07000 Biskra RP, Algeria;2. Institute of Physics, University of Sindh, Jamshoro, Pakistan;3. School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham NG7 2RD, UK;1. CNR-Nanotec, Nanotechnology Institute, Campus Ecotekne, Via Monteroni, 73100 Lecce, Italy;2. IMM-CNR Institute for Microelectronic and Microsystems, Campus Ecotekne, Via Monteroni, 73100 Lecce, Italy;3. King Abdulaziz City for Science and Technology, Nanotechnology Research Centre, 11442 Riyadh, Saudi Arabia;4. Department of Materials Science and Engineering, University of Texas, Dallas, USA;1. Physics Department, Faculty of Science, Tanta university, 31527 Tanta, Egypt;2. ME Lab, Physics Department, Faculty of Science, Al-azhar University Cairo, Egypt;1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;2. School of Information and Communication Technology, Mongolian University of Science and Technology, Ulaanbaatar 51-29, Mongolia;3. Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology Wanju-gun 561-905, Republic of Korea;4. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793, Republic of Korea;5. Electronics & Telecommunication Research Institute, Daejeon 305-700, Republic of Korea;1. Laboratoire LPR, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba, Algeria;2. Université Libanaise, Faculté des sciences (I), Laboratoire de Physique et d?Electronique (LPE), Elhadath, Beirut, Lebanon;3. Condensed Matter Section, the Abdus Salam International Centre for Theoretical Physics (ICTP), Strada Costiera 11, 34014 Trieste, Italy |
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| Abstract: | Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour. |
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| Keywords: | High index GaAs Negative differential capacitance: deep levels SILVACO simulation |
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