|
|||||
|
|
Enhancement of optical and electrical properties of SILAR deposited ZnO thin films through fluorine doping and vacuum annealing for photovoltaic applications |
|
| Affiliation: | 1. Post Graduate & Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613503 Tamil Nadu, India;2. CUER – UL, Université de Lomé, BP: 1515, Lomé, Togo;3. Post Graduate & Research Department of Physics, Bishob Heber College (Autonomous),Trichy 620017,Tamil Nadu, India;1. School of materials Science and Engineering, Shanghai University, No. 149, Yanchang Road, Shanghai 200072, PR China;2. Key lab of advanced display and system application, Ministry of Education, Shanghai University, No. 149, Yanchang Road, Shanghai 200072, PR China;1. Physics Department, National Research Center, Dokki, Cairo, Egypt;2. Department of Physics, Faculty of Science and Arts, Aljouf University, Aljouf, Saudi Arabia;3. Thin Film Laboratory, Physics Department, Faculty of Education, Ain Shams University, Cairo, Egypt |
| Abstract: | Undoped and fluorine doped ZnO thin films were deposited onto glass substrates using successive ionic layer adsorption and reaction (SILAR) technique and then annealed at 350 °C in vacuum ambience. The F doping level was varied from 0 to 15 at% in steps of 5 at%. The XRD analysis showed that all the films are polycrystalline with hexagonal wurtzite structure and preferentially oriented along the (002) plane. Crystallite sizes were found to increase when 5 at% of F is doped and then decreased with further doping. It was seen from the SEM images that the doping causes remarkable changes in the surface morphology and the annealing treatment results in well-defined grains with an improvement in the grain size irrespective of doping level. All the films exhibit good transparency (>70%) after vacuum annealing. Electrical resistivity of the film was found to be minimum (1.32×10?3 Ω cm) when the fluorine doping level was 5 at%. |
| Keywords: | Zinc oxide Vacuum annealing SILAR technique TEM Optical Electrical properties |
| 本文献已被 ScienceDirect 等数据库收录！ | |