A high-selective positive-type developing technique for phase-change inorganic resist Ge2Sb2(1−x)Bi2xTe5 |
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| Affiliation: | 1. National Center for Nanoscience and Technology, Beijing 100190, China;2. Academy for Advanced Interdisciplinary Studies and School of Physics, Peking University, Beijing 100871, China;3. Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, Suzhou 212213, China;4. Suzhou HWN Nanotec. Co., LTD., China;1. State Key Discipline Laboratory of Wide BandGap Semiconductor Technology, School of Microelectronics, Xidian University, Xi''an 710071, PR China;2. School of Physics and Optoelectronic Engineering, Xidian University, Xi''an 710071, PR China;3. Faculty of Science, University of Paris-Sud, Paris 91400, France;4. Faculty of Information Engineering & Automation, Kunming University of Science and Technology, Kunming 650051, PR China;1. School of Chemistry & Physics, University of KwaZulu-Natal, Pietermaritzburg Campus, Private Bag X01, Scottsville 3209, South Africa;2. Department of Physics and Engineering Physics, Obafemi Awolowo University Ile-Ife, Nigeria;1. Department of Physics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700009, India;2. Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009, India |
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| Abstract: | Recently chalcogenide phase-change resist Ge2Sb2(1−x)Bi2xTe5, which is compatible in next generation full-vacuum microelectronic manufacturing, has been paid much more attention due to the its excellent properties, such as high etching selectivity between Si and Ge2Sb2(1−x)Bi2xTe5 (about 500), wide spectral absorption and able to be prepared in vacuum. However, the very low developing selectivity (lower than 5) between its crystalline and amorphous phase limits its application in lithography. Here we developed a novel high-selective developing method to significantly improve the selectivity up to 22 (5 times than before), which enables the inorganic resist to be workability. Moreover, the developing mechanism is revealed, and this is helpful to dry developing technology of Ge2Sb2(1−x)Bi2xTe5. |
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| Keywords: | Developing method Oxidation Positive resist |
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