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溅射气压对TiN薄膜的制备工艺及光学性能的影响
引用本文:付淑英.溅射气压对TiN薄膜的制备工艺及光学性能的影响[J].中国材料科技与设备,2011(6):40-42.
作者姓名:付淑英
作者单位:韩山师范学院物理与电子工程系,广东潮州521041
基金项目:新余市自然科学基金资助项目(2008zrkxii03)
摘    要:采用直流反应磁控溅射法,在Si(111)基底上制备氮化钛(TiNx)薄膜。研究了溅射沉积过程中腔体气压对TiNx薄膜结构及性能的影响。研究发现:在保持其它工艺参数不变的情况下,改变溅射气压,沉积的TiNx薄膜主要成分是立方相TiN,薄膜的结晶显示出明显的(200)择优取向。在腔体气压为0.5Pa时出现(200)衍射峰最强、择优取向最明显。随着腔体气压的增加,薄膜厚度变小,而衍射峰则呈减弱的趋势。在腔体气压为0.3Pa时,膜层致密均匀,没有大尺寸缺陷且光洁度好,薄膜的结晶度最好,表面也最光滑。在测试波长范围内对光的平均反射率最大(达85%),可满足光学薄膜质量方面的要求。

关 键 词:氮化钛薄膜  磁控溅射  溅射气压  反射率

Sputtering Barometric Pressure to TiN Thin Film Preparation Craft and Optical Property Influence
Affiliation:FU Shu --ying (Dept. of Phy & Elec. Eng Hanshan Nor Univ. Guangdong, Chaozhou, 521041, China)
Abstract:DC reactive magnetron sputtering, the Si (111) substrate prepared by titanitrn nitride (TtNx) film Studied the sputtering dep- osition process chamber pressure of TiNx film structure and properties. The study found: In keeping other process Fararneters unchanged, change the sputtering pressure, films deposited TtNx main cornlxments of the cubic phase TtN, films show a clear crystal (200) preferred orientatior. Pressure in the chamber when the 0. SPa (200) diffraction peak of the strongest, the most obvious preferred orientatiorL As the chamber pressure increases, the film thickness becomes smaller, while the peak was reduced while the trend. In the cavity pressure is 0. 3Pa, the film compact and uniform, no large--size defects and finish is good, the best film of crystaUinity, smooth surface most. Wavelength range of light in the test, the average maximtrn reflectance (85%), to meet the requirements of the optical quality of films.
Keywords:TiN thin films  Magnetron sputtering  Sputtering pressure  Reflectivity
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