Epitaxial growth and properties of MgxZn1-xO films produced by pulsed laser deposition |
| |
| Authors: | A. A. Lotin O. A. Novodvorsky E. V. Khaydukov V. N. Glebov V. V. Rocheva O. D. Khramova V. Ya. Panchenko C. Wenzel N. Trumpaicka K. D. Chtcherbachev |
| |
| Affiliation: | 1.Institute on Laser and Information Technologies,Russian Academy of Sciences,Shatura, Moscow oblast,Russia;2.Institute of Semiconductor and Microsystems Technology,University of Technology,Dresden,Germany;3.Moscow State Institute of Steel and Alloys (Technological University),Moscow,Russia |
| |
| Abstract: | The Mg
x
Zn1-x
O thin films with a Mg content corresponding to x = 0–0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the
films on the single-crystal Al2O3 (00.1) substrates are established. The record limit of solubility of Mg in hexagonal ZnO, x = 35 is attained. In this case, the lattice mismatch for the parameter a of the ZnO and Mg0.35Zn0.65O films does not exceed 1%, whereas the band gaps of the films differ by 0.78 eV. The surface roughness of the films corresponds
to 0.8–1.5 nm in the range of x = 0–0.27. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
