| 基于单一类型载流子的电子倍增CCD倍增模型 |
| |
| 引用本文： | 张灿林,陈钱,尹丽菊.基于单一类型载流子的电子倍增CCD倍增模型[J].兵工学报,2011,32(5):580-583. |
| |
| 作者姓名： | 张灿林 陈钱 尹丽菊 |
| |
| 作者单位： | (南京理工大学 电子工程与光电技术学院， 江苏 南京 210094) |
| |
| 摘 要： | 基于单一类型载流子,讨论了电子倍增CCD(EMCCD)的雪崩倍增原理,并在此基础上使用经典分段电离率模型,结合雪崩倍增积分关系式建立了EMCCD的倍增模型.根据实际器件倍增结构和栅压幅值确定使用Wolff多次碰撞电离理论.通过倍增模型的理论计算与实际器件的倍增曲线比较发现边缘场强度足够大,倍增区足够宽才能引起适当的信号...
|
| 关 键 词： | 光电子学与激光技术 电子倍增CCD 电子倍增 片上增益 边缘场 电荷倍增极 |
Multiplication Model of Electron Multiplying CCD Based on Single Type of Carrier |
| |
| ZHANG Can-lin,CHEN Qian,YIN Li-ju.Multiplication Model of Electron Multiplying CCD Based on Single Type of Carrier[J].Acta Armamentarii,2011,32(5):580-583. |
| |
| Authors: | ZHANG Can-lin CHEN Qian YIN Li-ju |
| |
| Affiliation: | (School of Electronic and Optical Engineering, Nanjing University of Science and Technology,Nanjing 210094, Jiangsu, China) |
| |
| Abstract: | The avalanche multiplication principle of electron multiplying CCD(EMCCD) was discussed based on single type of carrier,and a multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula.Wolff's ionization rate model was selected according to the structure and the multiplication gate voltage amplitude of the actual devices.By comparing the theoretical result with the multiplication curve of the actual device,it can be found that only enough ... |
| |
| Keywords: | optoelectronics and laser electron multiplying CCD electron multiplication gain-on-chip fringing field charge multiplication gate |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《兵工学报》浏览原始摘要信息 |
|
点击此处可从《兵工学报》下载全文 |
