| 衬底温度对反应磁控溅射制备AlN压电薄膜的影响 |
| |
| 引用本文： | 王忠良,刘桥.衬底温度对反应磁控溅射制备AlN压电薄膜的影响[J].电子元件与材料,2005,24(7):47-49. |
| |
| 作者姓名： | 王忠良 刘桥 |
| |
| 作者单位： | 贵州大学,贵州,贵阳,550025;贵州大学,贵州,贵阳,550025 |
| |
| 摘 要： | 采用反应磁控溅射法在Si(111)衬底上沉积了AlN薄膜。XRD分析表明,在5种温度下,AlN均以(100)面取向,衬底温度的提高有利于薄膜结晶性的改善,在600℃以上时AlN中Al—N0键断裂,仅出现(100)衍射峰。AFM分析显示,在600℃时平均晶粒尺寸90nm,Z轴最高突起仅为23nm。
|
| 关 键 词： | 无机非金属材料 AlN压电薄膜 反应磁控溅射 择优取向 |
| 文章编号： | 1001-2028(2005)07-0047-03 |
AlN Piezoelectric Thin Film Prepared by Reactive Magnetron Reactive Sputtering |
| |
| WANG Zhong-liang,LIU Qiao.AlN Piezoelectric Thin Film Prepared by Reactive Magnetron Reactive Sputtering[J].Electronic Components & Materials,2005,24(7):47-49. |
| |
| Authors: | WANG Zhong-liang LIU Qiao |
| |
| Abstract: | AlN thin films were successfully deposited on Si(111) substrates by reactive magnetron sputtering. XRD measurements detect AlN thin films with preferential orientations (100) at 5 different substrate temperature. The increase of substrate temperature will improve crystallizability. The Al—N0 bond will break and only detect (100) peak when substrate temperature is over 600℃. AFM observations of the films deposited at 600℃ reveal fine grains with size of 90 nm, topmost protuberance of 23 nm. |
| |
| Keywords: | inorganic non-metallic materials AlN piezoelectric thin film reactive magnetron sputtering preferential orientation |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
