SILICON MICRO-TRENCH ETCHING USING HIGH-DENSITY PLASMA ETCHER |
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Authors: | TT Sun ZGLiu HCYu MB Chen JM Miao |
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Affiliation: | 1. Physics Department of ShanghaiJiaotong University, Shanghai 200240, China;Micromachine Center, School of Mechanical and Production Engineering, Nanyang Technological University, 639798, Singapore 2. Physics Department of ShanghaiJiaotong University, Shanghai 200240, China 3. Micromachine Center, School of Mechanical and Production Engineering, Nanyang Technological University, 639798, Singapore |
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Abstract: | Dry etching of silicon is an essential process step for the fabrication of Micro electromechancal system (MEMS). The AZ7220 positive photo-resist was used as the etching mask and silicon micro-trenches were fabricated with a multiplexed indu ctively coupled plasma (ICP) etcher. The influence of resist pattern profile, an d etch condition on sidewall roughness were investigated detail. The results sho w that the sidewall roughness of micro-trench depends on profiles of photo-resis t pattern, the initial interface between the resist bottom surface and silicon s urface heavily. The relationship between roughness and process optimization para meters are presented in the paper. The roughness of the sidewall has been decrea sed to a 20-50nm with this experiment. |
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Keywords: | deep RIE silicon etching micro-trench photo-resist |
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