| 掺SrLi1／4Nb3／4O3的SrTiO3缺陷化学研究 |
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| 引用本文： | 赵景畅,鲍慈光.掺SrLi1／4Nb3／4O3的SrTiO3缺陷化学研究[J].功能材料,1999,30(4):397-398,401. |
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| 作者姓名： | 赵景畅 鲍慈光 |
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| 作者单位： | 云南大学物理系 |
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| 基金项目： | 云南省教委应用基础基金 |
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| 摘 要： | 利用Ｈ２／Ｈ２Ｏ体系获得不同的氧分压，上电极法 掺杂ＳｒＬｉ１／４Ｎｂ３／４Ｏ３的ＳｒＴｉＯ３瓷体在８００－１２００℃，Ｐｏ２＝１０＾１７－１０＾５Ｐａ的电导率。通过ｌｏｇＰｏ２－ｌｏｇσ图，计算出半导化活化焓约为２８７．７ｋＪ／ｍｏｌ，讨论了ＳｒＬｉ１／４Ｎｂ３／４Ｏ３掺杂的ＳｒＴｉＯ３在不同氧分压区域的主ｎ型半导体化向ｐ型半导化转变的特点。
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| 关 键 词： | 钛酸锶 半导体陶瓷 缺陷 活化焓 氧分压 掺杂 |
Study on Defects of SrTiO3 Doped with SrLi1/4Nb3/4O3 |
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| ZHAO Jingchang,BAO Ciguang,YANG Zonglu.Study on Defects of SrTiO3 Doped with SrLi1/4Nb3/4O3[J].Journal of Functional Materials,1999,30(4):397-398,401. |
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| Authors: | ZHAO Jingchang BAO Ciguang YANG Zonglu |
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| Affiliation: | ZHAO Jingchang,BAO Ciguang,YANG Zonglu Department of Physics,Yunnan University,Kunming,650091,China |
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| Abstract: | The defects of polycrystalline SrTiO3 doped with SrLi1/4Nb3/4O3 were studied at oxygen pressure 10-17 105 Pa which were obtained by H2/H2O system at temperature 8001200. The experimental data were schemed with log PO2 vs log . From the linerar relationship between log PO2 and log FZ], the calculated semiconductive activation enthalpies of SrTiO3 doped with SrLi1/4Nb3/4O3 was about 287.7kJ/mol at PO2=10-7Pa. At the same time,the dominant dominant defects were deduced and the semiconductive transition mechanism were discussed by the theory of defect chemistry. |
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| Keywords: | SrTiO3 semiconductor defect activation enthalpies |
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