Device characteristics of GaAlAs buried-multiquantum-well lasers fabricated by Zn-diffusion-induced disordering |
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| Authors: | Nakashima H. Semura S. Ohta T. Uchida Y. Saito H. Fukuzawa T. Kuroda T. Kobayashi K. |
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| Affiliation: | Hitachi Ltd., Kokubunji, Tokyo, Japan; |
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| Abstract: | ![]()
A new transverse mode controlled buried-multiquantum-well (BMQW) laser has been fabricated using the simple and reliable Zn-diffusion-induced disordering process. BMQW lasers are characterized by low threshold current (20 mA) and single transverse and longitudinal mode oscillation. It is observed that the threshold current is proportional to the stripe width and the transverse mode is controlled by controlling the stripe width. From these results, it is confirmed that the BMQW structure provides good optical confinement as well as current confinement. |
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