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On the origin of the dielectric breakdown mechanism in plasma-polymerized hexamethyldisiloxane films |
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| Authors: | D. Montalan N. Souag Y. Segui C. Laurent |
| Affiliation: | Laboratoire de Génie Electrique (U.A. 304), Université Paul Sabatier, Bât. 3R1 B3, 118 route de Narbonne, 31062, Toulouse Cédex, France |
| Abstract: | Dielectric breakdown phenomena of plasma-deposited hexamethyldisiloxane are discussed. We show that the deposition conditions and post-treatment can change the dielectric strength. A lowering of the breakdown field was attributed to reactions with oxygen species during or after deposition. |
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