The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise |
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| Authors: | Chun Hu Ji Zhao Li GP Liu P Worley E White J Kjar R |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA; |
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| Abstract: | The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process |
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