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A detailed study of the series resistance effect on CdS/CdTe solar cells with Cu/Mo back contact
Authors:J.L. Peñ  a,O. Aré  sV. Rejó  n,A. Rios-FloresJuan M. Camacho,N. RomeoA. Bosio
Affiliation:
  • a Applied Physics Department, CINVESTAV-IPN Mérida, C.P. 97310 Mérida, Yucatán, Mexico
  • b Dipartimento di Fisica, Università di Parma, Campus Universitario, Parco Area delle Scienza, 43100 Parma, Italy
  • Abstract:CdS/CdTe thin film solar cells with an area of 1 cm2 were obtained and studied in detail. A ZnO buffer layer was deposited by reactive RF-sputtering on commercial ITO substrates. The CdS layer was grown on ZnO also by using RF-sputtering and CdTe thin film was deposited by conventional CSS technique. The chlorination of the solar cells is performed into Freon atmosphere at 400 °C. The CdTe thin film surface was chemically etched by using Br-Methanol solution. The back contact was deposited using RF-sputtering from a pure Cu and Mo targets. The procedure developed in this work led us to make systematically solar cells with good efficiency. However, the series resistance has a high value for an area of 1 cm2 (22 Ω cm2). In order to make more detailed study, the solar cell with an area of 1 cm2 was divided in a 3 × 3 matrix. A good homogeneity in cell properties is observed and the efficiency increases to more than 11%, fundamentally through decreasing series resistance.
    Keywords:Solar cell   CdS/CdTe   Back contact   Series resistance
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