Very low threshold graded-indexseparate-confinement-heterostructure strained InGaAsPsingle-quantum-well lasers |
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| Authors: | Yamamoto N Yokoyama K Yamanaka T Yamamoto M |
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| Affiliation: | NTT Opto-Electron. Labs., Kanagawa; |
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| Abstract: | A low threshold current density of ~100 A/cm2 has been obtained at 1.55 μm using a graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well laser. The design of the laser structure is based on results calculated from the viewpoint of effective carrier injection into the well |
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