| 基于表面势的多晶硅晶体管漏电流物理模型 |
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| 引用本文： | 李希越,邓婉玲,黄君凯.基于表面势的多晶硅晶体管漏电流物理模型[J].半导体学报,2012,33(3):034005-6. |
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| 作者姓名： | 李希越 邓婉玲 黄君凯 |
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| 作者单位： | 暨南大学电子工程系,暨南大学电子工程系,暨南大学电子工程系 |
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| 基金项目： | 教育部科学技术研究重点项目（No.211206), 中央高校基本科研业务费专项资金（No.21611422), 广东高校优秀青年创新人才培养计划(育苗工程)(No.LYM10032) |
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| 摘 要： | 提出了一种基于薄层电荷模型、陷阱态密度和表面势的多晶硅薄膜晶体管漏电流物理模型。模型采用非迭代的运算方法, 简单且适用于所有大于平带电压的工作区域。 考虑了包括高斯分布的深能态和指数分布的带尾态在内的陷阱分布形式, 陷阱分布参数的提取通过光电子调制谱方法实现。通过模型与现有实验结果的比较, 得到一致的符合结果。
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| 关 键 词： | 多晶硅薄膜晶体管 电流模型 基础 物理 表面势 表面电位 迭代计算 平带电压 |
| 收稿时间： | 9/7/2011 12:24:48 PM |
A physical surface-potential-based drain current model for polysilicon thin-film transistors |
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| Li Xiyue,Deng Wanling and Huang Junkai.A physical surface-potential-based drain current model for polysilicon thin-film transistors[J].Chinese Journal of Semiconductors,2012,33(3):034005-6. |
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| Authors: | Li Xiyue Deng Wanling and Huang Junkai |
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| Affiliation: | Department of Electronic Engineering, Jinan University, Guangzhou 510632, China;Department of Electronic Engineering, Jinan University, Guangzhou 510632, China;Department of Electronic Engineering, Jinan University, Guangzhou 510632, China |
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| Abstract: | A physical drain current model of polysilicon thin-film transistors based on the charge-sheet model, the density of trap states and surface potential is proposed. The model uses non-iterative calculations, which are single-piece and valid in all operation regions above flat-band voltage. The distribution of the trap states, including both Gaussian deep-level states and exponential band-tail states, is also taken into account, and parameter extraction of trap state distribution is developed by the optoelectronic modulation spectroscopy measurement method. Comparisons with the available experimental data are accomplished, and good agreements are obtained. |
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| Keywords: | polysilicon thin-film transistors surface potential drain current model trap state distribution |
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