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NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching |
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| Authors: | Elena Filatova Aleksei Konashuk Yuri Petrov Evgeny Ubyivovk Andrey Sokolov Andrei Selivanov |
| Affiliation: | 1. Institute of Physics, St Petersburg State University, Ul’yanovskaya Str. 1, Peterhof, 198504, St Petersburg, Russia;2. Institute Nanometre Optics and Technology (FG-INT), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert Einstein Str. 15, 12489, Berlin, Germany |
| Abstract: | We have studied the stability of the resistive switching process in the Al/(In2O3)0.9(SnO2)0.1/TiO2 assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO2 layer was studied using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The region of the current instability in the I-V characteristics was revealed. Presumably this current instability is supported by the amorphous structure of the TiO2 film but is initiated by the surface morphology of the Al substrate. A formation of the O2 molecules was established which occurs specifically in the region of the current instability that is a result of electrical Joule heating manifestation. |
| Keywords: | ReRAM NEXAFS current instability local heating molecular oxygen |