Anodic etching of p-type cubic silicon carbide |
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| Authors: | G. L. Harris K. Fekade K. Wongchotigul |
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| Affiliation: | (1) Materials Science Research Center of Excellence, Department of Electrical Engineering, School of Engineering, Howard University, 2300 6th Street, NW, 20059 Washington, DC, USA |
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| Abstract: | ![]()
p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA cm–2. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm s–1 was obtained in a 1:1:50 HF:HCl:H2O electrolyte. |
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