Defects in a-Si:H films induced by Si ion implantation

Undoped a-Si:H films implanted with silicon ions (dose 10¹²–10¹⁴ cm⁻², mean energy ɛ=60 keV) at room temperature have been studied. The following results of the interaction of such films with ion beams have been established: formation of defects (dangling Si-Si bonds) in the neutral state (D ⁰), change in the charge state D ⁰→D ⁻, the a-Si:H→a-Si transition, and growth of inhomogeneity of the structure. It is shown that these effects depend on the initial structures and electronic characteristics of the films. Fiz. Tekh. Poluprovodn. 33, 464–468 (April 1999)