| 8～16GHzGaAs单片宽带分布放大器 |
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| 作者单位： | The 13th Institute，Ministry of EI，Shijiazhuang，050051 |
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| 摘 要： | 报道了８～１６ＧＨｚＧａＡｓ单片宽带分布放大器的设计与制作。单级ＭＭＩＣ电路采用三个栅宽为２８０μｍ的ＧａＡｓＭＥＳＦＥＴ作为有源器件，芯片尺寸为１．１ｍｍ×１．６ｍｍ。在８～１６ＧＨｚ频率范围，用管壳封装的两级级联放大器增益Ｇ＿ａ，为１１．３±１ｄＢ，噪声系数Ｆ＿ｎ＜６ｄＢ，输出功率Ｐ＿（１ｄＢ）＞１６ｄＢｍ。
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| 关 键 词： | 单片集成，分布放大器 |
8～16GHz GaAs Monolithic Wideband Distributed Amplifier |
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| Authors: | Yu Lingli Ding Kuizhang Wu Ahui He Qingguo |
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| Abstract: | The design and fabrication of 8～16 GHz GaAs monolithic traveling- wave amplifier is described in this paper.The single-stage MMIC is consist of 3 GaAs MESFETs,with 280μm gate periphery.The chip size is 1.1mm × 1.6mm. In the 8～ 16 GHz frequency range,the noise figure is less than 6dB,the gain is 11±1dB,the output powre P_(1dB) is greater than 16dBm for a two- stage amplifier with case package. |
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| Keywords: | MMIC Traveling-wave amplifier |
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