Effect of heat transfer on the C49–C54 phase transformation in TiSi2 thin film

In this paper, the effect of heat transfer on the C49–C54 phase transformation in TiSi₂ thin film was investigated for the first time. Variation of the height of the chamber in the furnace during the annealing process was found to affect the sheet resistance (Rs) value of TiSi₂. By employing a moderate height of the annealing chamber, which makes it possible for the gas molecules inside to be more turbulent, the reduction of Rs can be achieved. From the standpoint of heat transfer theory, it has been proved in this paper that the enhancement of the thermal energy exchange between the wafer and the surrounding ambient contributes to the low resistivity C54 phase formation.