High-efficiency Ku-band HBT MMIC power amplifier |
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| Authors: | Bartusiak PJ Henderson T Kim T Bayraktaroglu B |
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| Affiliation: | Texas Instrum. Inc., Dallas, TX; |
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| Abstract: | A Ku-band monolithic HBT power amplifier was developed using a metal-organic chemical vapor deposition (MOCVD)-grown AlGaAs/GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5 V collector bias, the amplifier produced 0.5 W CW output power with 5.0 dB gain and 42% power-added efficiency in the 15-16 GHz band. When operated at a single frequency (15 GHz), 0.66 W CW output power and 5.2 dB of gain were achieved with 43% PAE |
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