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Fabrication of high-aspect ratio Si pillars for atom probe ‘lift-out’ and field ionization tips |
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| Authors: | R.A. Morris R.L. Martens I. Zana G.B. Thompson |
| Affiliation: | 1. Department of Metallurgical and Materials Engineering, The University of Alabama, Box 870202, Tuscaloosa, AL 35487, USA;2. Central Analytical Facility, The University of Alabama, Box 870164, Tuscaloosa, AL 34587, USA;3. Center for Materials for Information Technology, The University of Alabama, 203 Bevill Building, Tuscaloosa, AL 34587, USA |
| Abstract: | A process for fabricating high-aspect ratio (∼1:20), micron-sized Si [0 0 1] pillars using mechanical and chemical size reduction is presented. A dicing saw was used for mechanically patterning an array of square pillars with side lengths of >20 μm. These pillars were then reduced in size using an aqueous NaOH and KOH solution heated to 100 °C. The chemical etch reduces the pillar size within the time range amenable for focus ion beam milling and/or attachment for atom probe ‘lift-out’ specimens. The pillars can be formed with either a flat top surface or into <100 nm tip points for direct field ionization. |
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