首页 | 本学科首页   官方微博 | 高级检索  
     

镜像法在计算LDMOS热模型中的运用
引用本文:杨烨.镜像法在计算LDMOS热模型中的运用[J].电子器件,2010,33(3):299-302.
作者姓名:杨烨
作者单位:1. 东南大学苏州研究院高频高功率器件与集成技术研究中心,江苏,苏州,215123;东南大学集成电路学院,南京,210096
2. 东南大学国家ASIC系统工程技术研究中心,南京,210096
3. 苏州工业园区教育投资发展有限公司&苏州英诺迅科技有限公司射频功率器件及电路技术中心,江苏,苏州,215123
摘    要:计算LDMOS器件的二维温度分布,采用镜像方法从计算单指条器件的温度出发,考虑实际问题中存在的表面绝热条件以及两层介质间的连续性条件,获得单指条器件纵向温度分布函数.将所有热源在表面上点的温度进行叠加,得到多指条并联时器件的横向温度分布图.基于MATLAB编程计算,结果表明:镜像法简单实用且能更精确的计算出温度的梯度分布.此计算结果可用于开发精确的器件热模型.

关 键 词:横向扩散金属氧化物半导体  镜像法  边界条件  温度分布

Application of Image Method in developing a LDMOS Thermal Model
YANG Ye,HUA Yunan,SUN Xiaohong,ZHANG Xiaodong,CAO Huai.Application of Image Method in developing a LDMOS Thermal Model[J].Journal of Electron Devices,2010,33(3):299-302.
Authors:YANG Ye  HUA Yunan  SUN Xiaohong  ZHANG Xiaodong  CAO Huai
Affiliation:YANG Ye1,2,HUA Yunan3,SUN Xiaohong3,ZHANG Xiaodong4,GAO Huai31.High Frequency & High Power Device and Integrated Technology Research Center,Research Institute of Southest University at Suzhou,Suzhou Jiangsu 215123,China,2.Institute of Integrated Circuit,Southeast University,Nanjing 210096,3.National ASIC System Engineering Research Center,4.Joint RF Power Device & Circuit Technology Center,Suzhou SIP Education Development and Investment Co,Ltd & Suzhou Innotio...
Abstract:Image method is proposed to calculate the two-dimensional temperature distribution of LDMOS.The vertical temperature distribution is first computed for a finger accounting for the adiabatic boundary condition at the surface and the continuity conditions at the interface between two layers.For a multi-finger device,the lateral temperature distribution is further obtained with superposition principle.Calculation results based on MATLAB show that image method provides a convenient and efficient approach which ...
Keywords:MATLAB
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《电子器件》浏览原始摘要信息
点击此处可从《电子器件》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号