Polymer-based non-volatile resistive random-access memory device fabrication with multi-level switching and negative differential resistance state |
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| Affiliation: | 1. Key Lab for Advanced Materials, Institute of Applied Chemistry, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China;2. Institude of Basic and Applied Sciences, Egypt-Japan University of Science and Technology (E-JUST), Alexandria, Egypt;3. School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;4. Green Catalysis Center and College of Chemistry, Zhengzhou University, Zhengzhou 450001, China;1. Center for Sustainable Future Technologies, Istituto Italiano di Tecnologia, Corso Trento 21, 10129 Torino, Italy;2. Department of Applied Science and Technology (DISAT), Politecnico Di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy;1. Department of Mechatronics Engineering, Jeju National University, Jeju, South Korea;2. Department of Electronic Engineering Jeju National University, Jeju, South Korea;3. Department of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Science and Technology, Topi, Swabi, KPK, Pakistan;4. Center for Innovative Development of Science and New Technologies, Aini St. 299/2, Dushanbe, 734063, Tajikistan |
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| Abstract: | 
Resistive random-access memory (RRAM) has been widely considered for its prospective applicability owing to its non-volatile characteristics. In this study, a polymer-based vacuum-free RRAM device fabricated with the conductive polymer, poly(3,4-ethylene-dioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) was proposed. Pristine PEDOT:PSS coated on indium tin oxide (ITO) electrode was used as the active layer, while PEDOT:PSS with 16 vol% ethylene glycol was added for the top electrode. The PEDOT:PSS-based RRAM device demonstrated controlled non-volatile bipolar switching and a good ON/OFF ratio with a negative differential resistance effect in the high-voltage range during the RESET process. Multi-level switching was also accomplished by controlling the voltage, which demonstrated reliable and non-volatile switching. The switching mechanism of this polymer RRAM device can be explained through the electrochemical filamentary formation as well as the current-induced phase segregation of PEDOT:PSS near the anode(ITO)/polymer interface. |
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| Keywords: | Resistive random-access memory PEDOT:PSS Non-volatile Vacuum-free Negative differential resistance Multi-level cell |
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