| 化学镍金UBM沉积差异探讨 |
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| 引用本文： | 刘勇.化学镍金UBM沉积差异探讨[J].电子与封装,2009,9(10):35-38. |
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| 作者姓名： | 刘勇 |
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| 作者单位： | 上海纪元富晶电子有限公司,上海,201203 |
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| 摘 要： | UBM（under bumping metallization凸点下金属）的制作是整个FlipChip和WLCSP封装工艺中的关键。化学镍金UBM技术以其成本低、可靠性高而受到越来越多的关注和应用。对于不同功能和大小的I／O金属电极，化学镍金UBM的沉积会出现差异和不同。文中用混合电位理论解释了半导体晶圆化学镍金UBM沉积差异的现象。搅拌因素对于面积大小不同的I／O电极混合电位的影响是不同的，面积小的I／O电极其UBM沉积速度高于面积大的I／O电极。不同功能的I／O电极有着不同的起始电势，从而影响I／O电极的混合电位，表现为最终UBM沉积厚度和表面形貌的差异。
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| 关 键 词： | 半导体晶圆 化学镍金 UBM 沉积差异 混合电位 |
The Investigation of the Deposition Difference in Electroless Nickel/gold UBM Process |
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| LIU Yong.The Investigation of the Deposition Difference in Electroless Nickel/gold UBM Process[J].Electronics & Packaging,2009,9(10):35-38. |
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| Authors: | LIU Yong |
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| Affiliation: | LIU Yong (Shanghai Flipchip-Millennium Co.Ltd,Shanghai 201203,China) |
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| Abstract: | The fabrication of UBM (under bumping metallization) is the key step in flipchip and WLCSP process. As a low-cost, high-reliability technology, electroless nickel/gold UBM was studied and applied more and more in assembly. For I/O pads with different area and function, the deposition of electroless Ni/Au UBM is different. Based on the mixed potential theory, explaining the deposition difference of electroless nickel/gold UBM on semiconductor wafer. For I/O pads with different area, the effect of the stirrin... |
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| Keywords: | UBM |
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