Electrical properties of mercury telluride films

Vacuum deposited HgTe films formed at 120°C were studied for resistivity, activation energy, Hall constant, mobility μ and thermoelectric power α between 78 and 420 K. These films are semiconducting and p-type. Graphs of μ against temperature T showed peaks around 310 K suggesting the predominance of ionized impurity scattering below 310 K and piezoelectric scattering above 310 K. A reasonable agreement between the experimental and calculated values of α was also observed.