High-Temperature Oxidation of Boron Nitride: I, Monolithic Boron Nitride |
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| Authors: | Nathan Jacobson Serene Farmer Arthur Moore Haluk Sayir |
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| Affiliation: | Lewis Research Center, National Aeronautics and Space Administration, Cleveland, Ohio 44135;Advanced Ceramics Corporation, Lakewood, Ohio 44107 |
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| Abstract: | High-temperature oxidation of monolithic boron nitride (BN) is examined at 900–1200°C. Hot-pressed BN and both low- and high-density chemically vapor-deposited BN are studied. The oxidation product is B2O3( l ) and the oxidation kinetics are sensitive to crystallographic orientation, porosity, and impurity levels. The B2O3 product also reacts readily with ambient water vapor in the test furnace (ppm levels) to form the volatile species HBO2( g ), leading to overall paralinear kinetics. The linear rate constant extracted from these experiments agreed with that predicted from diffusion of HBO2( g ) across a static boundary layer. |
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