Voltage dependence of the differential capacitance of a p
+-n junction |
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Authors: | N A Shekhovtsov |
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Affiliation: | 1194. Karazin Kharkiv National University, pl. Svobody 4, Kharkiv, 61077, Ukraine
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Abstract: | The dependences of the differential capacitance and current of a p +-n junction with a uniformly doped n region on the voltage in the junction region are calculated. The p +-n junction capacitance controls the charge change in the junction region taking into account a change in the electric field of the quasi-neutral n region and a change in its bipolar drift mobility with increasing excess charge-carrier concentration. It is shown that the change in the sign of the p +-n junction capacitance with increasing injection level is caused by a decrease in the bipolar drift mobility as the electron-hole pair concentration in the n region increases. It is shown that the p +-n junction capacitance decreases with increasing reverse voltage and tends to a constant positive value. |
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