Suppression of cobalt silicide agglomeration using nitrogen(N2+) implantation |
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| Authors: | Wein-Town Sun Ming-Chi Liaw Hsu C.C.-H. |
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| Affiliation: | Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu ; |
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| Abstract: | In this paper, the effects of nitrogen coimplantation with boron into p+-poly gate in PMOSFETs on the agglomeration effects of CoSi2 are studied. The thermal stability of CoSi2/poly-Si stacked layers can be significantly improved by using nitrogen implantation. Samples with 40-nm cobalt silicide (CoSi 2) on 210-nm poly-Si implanted by 2×1015/cm 2 N2+ are thermally stable above 950°C for 30 s in N2 ambient. If the dose of nitrogen is increased up to 6×1015/cm2, the sheet resistance of CoSi2 film is not increased at all, and TEM photographs show that the agglomeration of CoSi2 film is completely suppressed |
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