半导体微腔激光器中的自发辐射耦合增强效应

针对半导体微腔激光器的结构特点,以及腔量子电动力学中自发辐射增强效应,采用光增益与载流子密度的对数关系,引入增益饱和项和非辐射复合项的贡献,指出即便是对于理想的封闭微腔,由于非辐射衰减速率的影响,光输出并不随泵浦线性变化。结合频谱和相图分析,给出了自发辐射耦合因子与微腔激光器的辐射阈值、开关延迟时间、驰豫振荡频率和光输出等参量关系的仿真结果,这对于微腔激光器的理论研究和优化器件结构有所裨益。

Enhancing Effect of Spontaneous Emission in Semiconductor Microcavity Lasers

According to structural property of microcavity lasers and enhancing effect of spontaneous emission in cavity quantum electron dynamics,Based on changing the logarithrnic relation of gain of carrier density,the stimulated-emission rate includes a gain saturation as well as carrier recombination term.A simple rate equation formula is discussed the characteristics of microcavity lasers.It was found that the characteristic curve of a "thresholdless"laser is strongly nonradiative depopulation-dependent.When the nonradiative depopulation is no zero,the light-current characteristic is not linearly even for an ideal closed microcavity.Described an analysis for transient response characteristics of microcavity lasers,We have got the relation of spontaneous emission factor on threshold,turn-on delay,relaxation oscillation frequency and output power.The result is benefit of semiconductor MQW lasers both in theoretical analysis and device structures.