GROWTH OF β-SiC BY rf SPUTTERING ON SILICON SUBSTRATES

1. IlltroductiollSili(.oll t.arbide (SiC) llas beell il1vestigated as a nlaterial with great poteIltial il1 high-p()xxer. high teulperature. and high-f1equel1c} devices, sil1ce it has feattres of high break-(l()ttll voltage, l1igll satllratioll t.elocit}…

GROWTH OF β-SiC BY rf SPUTTERING ON SILICON SUBSTRATES

Rf sputtering in an Ar discharge of a SiC target has been used to deposit β-SiCfilms on Si-(111) substrates. XRD and infrared absorption spectra measurementswere used to characterize the films. The results show that the deposited films are(111)-oriented β-SiC films, and a C rich buffer layer formed between the substrateand SiC films when the substrate temperature is higher than 800℃. IR and XRDresults of an annealing process at 800℃ in H2 atmosphere, indicate that the crystallinequality is determined mainly by the substrate temperature during the film growth, andthe annealing process can improve the quality of Si/SiC interface. Higher substratetemperature leads to better quality of crystalline structttre and lower quality of SiC/Siinterfaces. Combined with an annealing process we obtained SiC films with very goodquality of both crystalline and SiC /Si interface.