氚气标准源的研制

高性能芯片级原子气室的制备是现阶段芯片级量子传感仪器研制急需解决的关键技术之一。为解决目前芯片级原子气室研制领域存在的碱金属定量填充难、气密性差等问题,开展了高气密性芯片级原子气室制备方法研究,利用微电子机械系统（MEMS）技术实现了芯片级原子气室的批量制备。采用深硅刻蚀技术制备硅气室腔,利用RbN₃的光分解实现碱金属单质的制备及定量填充,采用阳极键合技术对原子气室进行两次硅片/玻璃键合封装,成功获得了以N₂为缓冲气体的Rb碱金属原子气室。对所制备的原子气室进行键合强度、气密性、吸收光谱测试,结果表明原子气室的玻璃/硅片/玻璃键合强度均较高,其中B组原子气室的漏气率平均值为2.2×10^-9 Pa?m³?s^-1,其气密性为目前行业内领先水平。最后从制备工艺上分析了两组原子气室的性能差异原因,为推动量子传感仪器的芯片级集成技术发展奠定重要基础。

Development of tritium reference gas

The preparation of chip scale atom vapor cells with high performance is one of the key technologies that urgently need to be solved in the development of chip scale quantum sensing instruments at present. In order to solve the problems of difficult quantitative filling of alkali metals and poor hermeticity in the preparation of chip scale atom vapor cells, the fabrication of the chip scale alkali atom vapor cells with high hermeticity was studied. The microelectromechanical system (MEMS) technology was used to realize the batch fabrication of chip scale atom vapor cells. The silicon cavity was prepared by deep silicon etching technology. The preparation and quantitative filling of alkali atoms were realized by photolysis of RbN₃. The atom vapor cell was sealed by silicon wafer/glass bonding twice using the anodic bonding technology. Rb alkali metal atom vapor cells with N₂ as buffer gas were successfully obtained . The bonding strength, hermeticity and absorption spectrum of the prepared atom vapor cell were tested. The results showed that the glass/silicon wafer/glass bonding strength of the atom vapor cell was high. The average leakage rate of the atom vapor cells in group B was 2.2×10^-9 Pa?m³?s^-1, which is the leading level in the industry currently. Finally, the reasons for the performance difference between the two groups of atom vapor cells were analyzed from the preparation processes, which lays an important foundation for promoting the development of chip scale integration technology of quantum sensing instruments.