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| 沟道电场分布对AlN/GaN HFETs极化库仑场散射的影响 | |
| 引用本文： | 于英霞,林兆军,吕元杰,冯志红,栾崇彪,杨铭,王玉堂. 沟道电场分布对AlN/GaN HFETs极化库仑场散射的影响[J]. 半导体学报, 2014, 35(12): 124007-5 |
| 作者姓名： | 于英霞 林兆军 吕元杰 冯志红 栾崇彪 杨铭 王玉堂 |
| 作者单位： | School of Physics,Shandong University;Scienceand Technologyon ASIC Laboratory,Hebei Semiconductor Research Institute |
| 基金项目： | 高等学校博士学科点专项科研基金;国家自然科学基金 |
| 摘 要： | Based on the measured capacitance–voltage(C–V) curves and current–voltage(I–V) curves for the prepared differently-sized Al N/Ga N heterostructure field-effect transistors(HFETs), the I–V characteristics of the Al N/Ga N HFETs were simulated using the quasi-two-dimensional(quasi-2D) model. By analyzing the variation in the electron mobility for the two-dimensional electron gas(2DEG) with the channel electric field, it is found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field(PCF) scattering. The 2DEG electron mobility difference is mostly caused by the PCF scattering which can reach up to 899.6 cm2/(V s)(sample a), 1307.4 cm2/(V s)(sample b),1561.7 cm2/(V s)(sample c) and 678.1 cm2/(V s)(sample d), respectively. When the 2DEG sheet density is modulated by the drain–source bias, the electron mobility for samples a, b and c appear to peak with the variation of the 2DEG sheet density, but for sample d, no peak appears and the electron mobility rises with the increase in the2 DEG sheet density. |
| 关 键 词： | drain Coulomb capacitance sized sheet modulated piezoelectric mostly contacts roughness |
| 收稿时间： | 2014-04-07 |
| 修稿时间： | 2014-07-08 |
The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors |
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| Yu Yingxi,Lin Zhaojun,L,#; Yuanjie,Feng Zhihong,Luan Chongbiao,Yang Ming and Wang Yutang. The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors[J]. Chinese Journal of Semiconductors, 2014, 35(12): 124007-5 | |
| Authors: | Yu Yingxi,Lin Zhaojun,L&# Yuanjie,Feng Zhihong,Luan Chongbiao,Yang Ming Wang Yutang |
| Affiliation: | School of Physics, Shandong University, Jinan 250100, China;School of Physics, Shandong University, Jinan 250100, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;School of Physics, Shandong University, Jinan 250100, China;School of Physics, Shandong University, Jinan 250100, China;School of Physics, Shandong University, Jinan 250100, China |
| Abstract: | Based on the measured capacitance-voltage (C-V) curves and current-voltage (I-V) curves for the prepared differently-sized AlN/GaN heterostructure field-effect transistors (HFETs), the I-V characteristics of the AlN/GaN HFETs were simulated using the quasi-two-dimensional (quasi-2D) model. By analyzing the variation in the electron mobility for the two-dimensional electron gas (2DEG) with the channel electric field, it is found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field (PCF) scattering. The 2DEG electron mobility difference is mostly caused by the PCF scattering which can reach up to 899.6 cm2/(V·s) (sample a), 1307.4 cm2/(V·s) (sample b), 1561.7 cm2/(V·s) (sample c) and 678.1 cm2/(V·s) (sample d), respectively. When the 2DEG sheet density is modulated by the drain-source bias, the electron mobility for samples a, b and c appear to peak with the variation of the 2DEG sheet density, but for sample d, no peak appears and the electron mobility rises with the increase in the 2DEG sheet density. |
| Keywords: | AlN/GaN heterostructure field-effect transistors channel electric field distribution polarization Coulomb field scattering electron mobility |
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