采用源极增强带带隧穿热电子注入编程的新型p沟选择分裂位线NOR快闪存贮器

提出一种新型的PMOS选择分裂位线NOR结构快闪存贮器,具有高编程速度、低编程电压、低功耗、高访问速度和高可靠性等优点.该结构采用源极增强带带隧穿热电子注入进行编程,当子位线宽度为128位时,位线漏电只有3.5μA左右,每位编程功耗为16.5μW,注入系数为4×10-4,编程速度可达20μs,存贮管的读电流可达60μA/μm以上.分裂位线结构和低编程电压使得该结构具有很好的抗位线串扰特性和可靠性.

Novel p-Channel Selected n-Channel Divided Bit-Line NOR Flash Memory Using Source Induced Band-to-Band Hot Electron Injection Programming

A novel p-channel selected n-channel divided bit-line NOR(PNOR) flash memory,which features low programming current,low power,high access current,and slight bit-line disturbance,is proposed.By using the source induced band-to-band hot electron injection (SIBE) to perform programming and dividing the bit-line to the sub-bit-lines,the programming current and power can be reduced to 3.5μA and 16.5μW with the sub-bit-line width equaling to 128,and a read current of 60μA is obtained.Furthermore,the bit-line disturbance is also significantly alleviated.