A novel pseudomorphic (GaAs1?xSbx-InyGa1?yAs)/GaAs bilayer-quantum-well structure lattice-matched to GaAs for long-wavelength optoelectronics |
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| Authors: | M Peter J Forker K Winkler K H Bachem J Wagner |
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| Affiliation: | 1. Fraunhofer-Institut für Angewandte Festk?rperphysik, Tullastrasse 72, D-79108, Freiburg, Federal Republic of Germany
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| Abstract: | Two types of quantum well (QW) structures grown lattice matched on (100) GaAs have been studied. The first type of structure
consists of pseudomorphic GaAsxSb1-x/GaAs (x≤0.3) SQWs which show emission wavelengths longer than those reported for pseudomorphic InyGa1−yAs/GaAs QWs. However, the attractive emission wavelength of 1.3 μm has not been achieved. To reach this goal, a novel type
of bilayer QW (BQW) has been grown consisting of a stack of two adjacent pseudomorphic layers of GaAsxSb1−x and In Ga1-y As embedded between GaAs confinement layers. In this BQW, a type-II heterojunction is formed between GaAsxSb1−x and InyGa1−yAs, resulting in a spatially indirect radiative recombination of electrons and holes at emission wavelengths longer than those
achieved in the GaAsxSb1−x/GaAs and IiyGa1−yAs/GaAs SQWs. The longest 300K emission wavelength observed so far was 1.332 μm. |
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| Keywords: | Band alignments bilayer quantum well critical layer thickness GaAs1− xSbx/GaAs quantum well InyGa1− y As/Ga As quantum well |
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