Excellent temperature stability of strain in PZ-PT-BNT ternary ceramics |
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| Affiliation: | 1. School of Advanced Materials and Nanotechnology, Xidian University, Xi?an, 710071, China;2. School of Mechano-Electronic Engineering, Xidian University, Xi?an, 710071, China;1. School of Advanced Materials and Nanotechnology, Xidian University, 266 Xinglong Section of Xifeng Road, Xi''an, 710126, Shaanxi, PR China;2. Nanomaterials Group, Institute of System, Information Technologies and Nanotechnologies (ISIT), Fukuoka Industry-Academia Symphonicity (FiaS), 4-1 Kyudaishinmachi, Nishi-ku, Fukuoka, 819-0388, Fukuoka, Japan;3. School of Mechanical Engineering, Chengdu University, No. 2025, Chengluo Avenue, Chengdu, 610106, Sichuan, PR China;1. School of Materials Science and Engineering, Shanghai University, Shanghai, People’s Republic of China;2. School of Materials Science and Engineering, UNSW Australia, NSW 2052, Australia;3. Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, North Wollongong 2500, Australia;4. College of Physics, Jilin University, Changchun, People’s Republic of China;5. Australian Synchrotron (ANSTO), 800 Blackburn Rd, Clayton, VIC 3168, Australia;6. State Key Laboratory of Silicon Materials and Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China;1. College of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450002, PR China;2. Henan Key Laboratory of Magnetoelectronic Information Functional Materials, Zhengzhou University of Light Industry, Zhengzhou, 450002, PR China;1. Institute of Electro Ceramics & Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, PR China;2. Center for Advanced Ceramics, School of Materials Science and Engineering, Anhui Polytechnic University, Wuhu 241000, PR China;1. School of Materials Science and Engineering, Shanghai University, Shanghai, China;2. National Key Laboratory of Science and Technology on Underwater Acoustic Antagonizing, Shanghai, 201108, China;3. Shanghai Marine Electronic Equipment Research Institute, Shanghai, 201108, China;1. Department of Information Engineering, Quzhou College of Technology, Quzhou, 324000, China;2. Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials, Xi''an Jiaotong University, Xi''an, 710049, China;3. Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan, 030051, China;4. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi''an Jiaotong University, Xi''an, 710049, China;5. Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, SE-97187, Luleå, Sweden;6. Laboratoire Structures, Propriétés et Modélisation des Solides, Université Paris Saclay, CentraleSupélec, CNRS-UMR8580, Grande Voie des Vignes, Châtenay Malabry, Cedex, 92295, France |
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| Abstract: | Lead-based Pb(Zr, Ti)O3 ceramics have been widely applied in piezoelectric actuators, and yet high temperature stability and large strain have been pursued for further application. In this work, a novel PbZrO3–PbTiO3-(Bi0.5Na0.5)TiO3 (PZ-PT-BNT) piezoelectric ceramic is designed and prepared by solid-state route. It is found that the introduction of BNT constituent enhances the relaxation behavior of PZ-PT ceramic, inhibits the abrupt change in dielectric properties near Curie temperature, and increases the proportion of tetragonal phase with high temperature stability. Meanwhile, the patterns of electric domains are intentionally modified by adjusting composition of PZ-PT-BNT. Short and broad electric domains in PZ-PT-0.03BNT ceramic are observed by piezoresponse force microscopy, which are insensitive to temperature and have faster response under electric field, contributing to strain characteristics. As a result, through integrating phase structure and electric domain configuration, a strain of 0.21% and excellent temperature stability where the variation of strain is less than 8% in the temperature range of 25–250 °C are achieved in PZ-PT-0.03BNT ceramic. The findings provide an effective strategy for improving the strain stability of PZ-PT-based piezoelectric ceramics, and demonstrate that PZ-PT-BNT ceramics have potential application prospects in high-temperature piezoelectric actuators. |
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| Keywords: | Piezoelectric ceramic Electric domain Strain Temperature stability |
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