Preparation of Y2O3 Buffer Layer on LaAlO3 Substrate by TFA-MOD Method |
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| Authors: | Z. Liu S. F. Wang Y. L. Zhou S. Q. Zhao K. J. Jin Z. H. Chen H. B. Lu G. Z. Yang |
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| Affiliation: | (1) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100080 Beijing, People’s Republic of China;(2) Physics and Technology College, Hebei University, 071002 Baoding, People’s Republic of China |
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| Abstract: | Chemical solution deposition is a promising technique for fabrication of high-temperature superconducting films and oxide
buffer layers due to its reproducibility and low cost. In this work, Y2O3 buffer layers were prepared on (100) LaAlO3 substrates by mental organic deposition method using trifluoroacetate. The resulting Y2O3 films crystallized as a single phase at 900°C and showed a low degree ofc-axis orientation. The scanning electron micrography showed that the surface of the films was smooth with a uniform grain
size of approximately 10 nm. |
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| Keywords: | Y2O3
mental organic deposition trifluoroacetate |
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