| 间歇供氨高温AlN缓冲层对AlGaN/GaN异质结的影响 |
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| 引用本文： | 段焕涛,郝跃,张进成.间歇供氨高温AlN缓冲层对AlGaN/GaN异质结的影响[J].半导体学报,2009,30(9):093001-4. |
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| 作者姓名： | 段焕涛 郝跃 张进成 |
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| 作者单位： | Laboratory;Fundamental;Science;National;Defense;Wide;Band-Gap;Semiconductor;Technology;School;Microelectronics;Xidian;University; |
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| 基金项目： | 国家重点基础研究发展计划 |
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| 摘 要： | 研究了以间歇供氨的方法直接高温生长的氮化铝为缓冲层的AlGaN/GaN材料，高温氮化铝的应用可以有效的提高晶体质量和表面形貌，并且二维电子气的浓度和迁移率也得到改善。
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| 关 键 词： | 金属有机物气相外延，氮化铝，氮化镓 |
Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures |
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| Duan Huantao,Hao Yue and Zhang Jincheng.Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AlGaN/GaN heterostuctures[J].Chinese Journal of Semiconductors,2009,30(9):093001-4. |
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| Authors: | Duan Huantao Hao Yue and Zhang Jincheng |
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| Affiliation: | Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia (IASA) method on AlGaN/GaN heterostructures was studied. The use of AlN by the IASA method can effectively increase the crystalline quality and surface morphology of GaN. The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated. |
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| Keywords: | metal-organic vaporphase epitaxy aluminum nitride gallium nitride AlGaN/GaN heterostructures |
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