| 利用ISE-TCAD分析和设计SCR结构的静电保护电路 |
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| 引用本文： | 向李艳,邬齐荣,龚敏,陈畅.利用ISE-TCAD分析和设计SCR结构的静电保护电路[J].电子与封装,2007,7(8):30-33,38. |
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| 作者姓名： | 向李艳 邬齐荣 龚敏 陈畅 |
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| 作者单位： | 四川大学物理科学与技术学院,微电子技术四川省重点实验室,成都,610064 |
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| 摘 要： | 传统的ESD保护电路设计主要基于尝试性和破坏性的实验,这种方法不利于产品的推出1]。文中提出使用ISE-TCAD工具对ESD保护电路进行模拟和优化,以快速地获取面积参数。并以某一典型0.6μmCMOS工艺的可控硅整流器(SCR)结构为例,进行ESD人体放电模型的模拟和面积估算,达到了缩短设计周期和增加设计成功率的目的。
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| 关 键 词： | 静电保护 ISE-TCAD 可控硅整流器 |
| 文章编号： | 1681-1070（2007）08-0030-04 |
| 修稿时间： | 2007-04-10 |
Analyzing and Designing of SCR-Structured ESD Protection with ISE-TCAD |
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| XIANG Li-yan,WU Qi-rong,GONG Min,CHEN Chang.Analyzing and Designing of SCR-Structured ESD Protection with ISE-TCAD[J].Electronics & Packaging,2007,7(8):30-33,38. |
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| Authors: | XIANG Li-yan WU Qi-rong GONG Min CHEN Chang |
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| Affiliation: | School of Physical Science And Technology, Sichuan University, Sichuan Province Key Laboratory of Microelectronics, Chengdu 610064, China |
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| Abstract: | The conventional method for ESD protection design is based tentative and ruinous experiments, which is harmful for the generation of new produce. In this paper, ISE-TCAD tool has been introduced to simulate the SCR-structured ESD protection and predict the characteristics of the circuit with a typical 0.6μm CMOS technology. The results show that it was an easy way to design SCR-structured ESD protection circuit. |
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| Keywords: | ESD protection ISE-TCAD SCR |
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