| 微电子工艺中的清洗技术现况与展望 |
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| 引用本文： | 刘玉岭,李薇薇,檀柏梅.微电子工艺中的清洗技术现况与展望[J].河北工业大学学报,2002,31(6):11-17. |
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| 作者姓名： | 刘玉岭 李薇薇 檀柏梅 |
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| 作者单位： | 河北工业大学,微电子研究所,天津,300130 |
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| 摘 要： | 介绍了微电子行业的清洗现状以及其工艺的清洗原理（包括颗粒、金属离子等），分析了存在的问题，阐述了硅片清洗的急待解决的难题和ODS（破坏臭氧层物质）清洗液的替代问题。说明了润湿剂、渗透剂和鳌合剂的作用，并对今后的微电子清洗发展方向进行了展望。
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| 关 键 词： | 微电子 清洗 金属离子 ODS 螯合剂 润湿剂 渗透剂 制作工艺 集成电路 |
| 文章编号： | 1007-2373(2002)06-0011-07 |
Present Situations and Prospects of Cleaning Technology in Microelectronics |
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| LIU Yu-ling,LI Wei-wei,TAN Bai-mei.Present Situations and Prospects of Cleaning Technology in Microelectronics[J].Journal of Hebei University of Technology,2002,31(6):11-17. |
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| Authors: | LIU Yu-ling LI Wei-wei TAN Bai-mei |
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| Abstract: | The basic principle of cleaning (such as particles and metallic ions etc.) and the current situation of cleaning in microelectronics are introduced. The question is analyzed. The urgent problem of silicon wafer cleaning and substitution of ozonosphere destroying substrate are elaborated emphatically. The functions of wetting agent, infiltration and chelation is explained. The developing orientations of microelectronic cleaning are also presented. |
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| Keywords: | microelectronics cleaning particle metallic ion ODS chelation wetting agent infiltration |
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