| Aluminum doping and dielectric properties of silicon carbide by CVD |
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| 引用本文： | 李智敏 苏晓磊 罗发 朱冬梅 周万城. Aluminum doping and dielectric properties of silicon carbide by CVD[J]. 中国有色金属学会会刊, 2007, 17(A02): 858-861 |
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| 作者姓名： | 李智敏 苏晓磊 罗发 朱冬梅 周万城 |
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| 作者单位： | State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi＇an 710072, China |
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| 基金项目： | Project （50572090） supported by the National Natural Science Foundation of China |
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| 摘 要： | Cubic β-SiC coating was grown onto the graphite substrate by the normal pressure chemical vapor deposition using CH3SiCl3 （MTS） as a source precursor at 1 150 ℃. But the hexagonal Al4SiC4 phase was generated in the doped process with trimethylaluminium （TMA） as the dopant. Microstructure of the deposit coating as-prepared was characterized by scanning electron microscope （SEM）, which consists of spherical particles with a very dense facet structure. The real component of permittivity ε＇ and dielectric loss tang of the coatings undoped and doped by TMA were carried out by a vector network analyzer in the microwave frequency ranges from 8.2 GHz to 12.4 GHz. The results show that both of them have low values, and doped coating has lower ε＇ and tan δ than undoped one due to the existence of Al4SiC4 impurity phase, which indicates that the desired Al/SiC solid solution at 1 150 ℃ in a normal argon atmosphere is not produced.
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| 关 键 词： | 碳化硅 铝掺杂 介电性能 化学气相沉积 |
| 收稿时间： | 2007-07-15 |
| 修稿时间： | 2007-09-10 |
Aluminum doping and dielectric properties of silicon carbide by CVD |
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| LI Zhi-min, SU Xiao-lei, LUO Fa, ZHU Dong-mei, ZHOU Wan-cheng. Aluminum doping and dielectric properties of silicon carbide by CVD[J]. Transactions of Nonferrous Metals Society of China, 2007, 17(A02): 858-861 |
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| Authors: | LI Zhi-min SU Xiao-lei LUO Fa ZHU Dong-mei ZHOU Wan-cheng |
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| Abstract: | |
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| Keywords: | silicon carbide aluminum doping dielectric properties chemical vapour deposition |
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