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Analysis of the polishing ability of electrogenerated chemical polishing
Affiliation:1. Department of Biomedical Engineering, National Yang-Ming University, No.155, Sec.2, Linong Street, Taipei 112, Taiwan;2. Department of General Dentistry, Chang Gung Memorial Hospital, 123, Ding-Hu Road, Kuei-Shan, Tao-Yuan 333, Taiwan;1. Institute for Computational Engineering and Sciences, The University of Texas at Austin, 1 University Station, Austin, TX 78712, United States;2. NASA Glenn Research Center, Cleveland, OH 44135, United States;1. Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science & Technology, Nanjing 210044, China;2. Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology (CICAEET), Nanjing University of Information Science and Technology, Nanjing 210044, China;3. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China;4. School of Physics and Electronic Engineering, Nanjing Xiaozhuang University, Nanjing 211171, China;1. Department of Mechanical and Industrial Engineering, Youngstown State University, Youngstown, OH, 44555, USA;2. Department of Mechanical Engineering, Iowa State University, Ames, IA, 50011, USA;1. Tribology Research Institute, National Traction Power Laboratory, Southwest Jiaotong University, Chengdu 610031, Sichuan Province, PR China;2. Key Laboratory of Testing Technology for Manufacturing Process (Ministry of Education), Southwest University of Science and Technology, Mianyang 621010, PR China
Abstract:Electrogenerated chemical polishing (EGCP) had been proved effective in improving both the smoothness and the flatness of copper surface in our previous work. In this paper the polishing ability, defined as the ratio between the material removal rate at the peak and at the valley of a rough surface, is studied theoretically and experimentally. In a mathematical model, the effects of the special wavelength L, the peak-to-valley height h of the workpiece surface profile and the working distance d between working electrode and workpiece surface on the polishing ability are studied. The results show that the polishing ability decreases with increasing the working distance and finally approaches the value (d + h)/d, if L is much larger than d. However, the effect of the working distance on polishing ability is negligible, if L is close to or less than d. The polishing ability also decreases with h decreasing. Based on the above analysis, an analytical expression of the polishing ability of EGCP is given. For validating the theoretical analysis, a copper surface is polished by EGCP and the change of the surface profile is measured and analyzed using the analytical expression. The measured polishing ability agrees well with the simulation results.
Keywords:Electrochemistry  Chemical polishing  Roughness  Polishing ability  Numerical simulation
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