Photoelectric properties of BiVO4 thin films deposited on fluorine doped tin oxide substrates by a modified chemical solution deposition process

BiVO₄ films deposited on Fluorine doped tin oxide glass substrates were successfully prepared by a modified chemical solution deposition process. Structure and optical spectrum analysis show that the resultant BiVO₄ films consist entirely of monoclinic scheelite structure and have a narrow band gap of ～2.66 eV. The films were investigated by photoelectrochemical and photovoltaic measurements with regard to hydrogen production and solar energy conversion under visible light. The BiVO₄ photoanodes show significantly higher visible light induced photoelectrochemical performance (～1.1 mA/cm² at 1.0 V vs. Ag/AgCl) than those reported ones, which is very promising for splitting water to H₂ and O₂. A Schottky BiVO₄ solar cell was also investigated for comparison with photoelectrochemical measurements. The correlation between the photoelectrochemical and photovoltaic behavior for BiVO₄ was explained. Our research should provide important support for the applications of BiVO₄ films or its modified forms such as doping and nanocomposite in heterojunction photoelectrochemical cells and solar cells with suitable energy level alignment at the interface.